Silicon carbide MOS

SiC MOSFET Description:

SiC MOSFET (Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors) stands for silicon carbide field-effect transistors. These devices exhibit high switching frequency, high voltage withstand capability, low on-state resistance, high operating temperature tolerance, and radiation resistance. Leveraging these advantages, SiC MOSFET converters can be made smaller, with higher integration, to reduce switching losses, increase power density, and lower overall system costs.

Product Features:

• High Breakdown Voltage: SiC MOSFETs can handle high voltage levels.

• Ultra-Low On-State Resistance: They exhibit minimal resistance when conducting.

• Low Capacitance for High-Speed Switching: SiC MOSFETs switch rapidly due to low internal capacitance.

• Minimal Temperature-Dependent Switching Losses: Their switching losses are less affected by temperature variations.

• Integrated Internal Freewheeling Diode with Extremely Low Reverse Recovery Charge: This diode enhances performance.

• Optimal Trade-off Between Switching and Conduction Losses.

Applications: 

SiC MOSFETs find applications in various fields, including:

• New Energy Vehicle (NEV) Inverters

• Photovoltaic (PV) Inverters

• Data Centers and Communication Power Supplies

• Battery-powered Forklifts and Uninterruptible Power Supplies (UPS)

• Industrial Switching Power Supplies

• LED Lighting Power Supplies

Main Packaging Types: